| PART |
Description |
Maker |
| SLD432S |
40W Array Laser Diode
|
SONY[Sony Corporation]
|
| SPLLG94-P |
Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 940nm
Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 940nm
|
OSRAM GmbH
|
| SPLLG98-P |
Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 975nm
Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 975nm
|
OSRAM GmbH
|
| AS098C40W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik G...
|
| AS081C480W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc.
Nichicon, Corp.
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
