PART |
Description |
Maker |
SGF32 |
N CHANNEL GAASMES TRANSISTOR
|
SANYO[Sanyo Semicon Device]
|
IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
|
MITSUMI ELECTRIC CO., LTD. Infineon Technologies AG HIROSE ELECTRIC Co., Ltd.
|
NSF20504 NSF205023 NSF20607 NSFM150 NSFM250 NSFM35 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 7A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-254 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 15A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 24A I(D) | TO-254 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 24A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-254 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 9A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-254 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-254
|
Sharma Electro Components, Inc.
|
BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
PHD18NQ10T PHP18NQ10T PHB18NQ10T PHB18NQ20T |
N-channel TrenchMOS(tm) transistor N-channel TrenchMOS TM transistor N-channel TrenchMOS transistor 18 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
PHX9NQ20T PHF9NQ20 PHF9NQ20T PHX9NQ20T127 |
N-channel TrenchMOS(TM) transistor N-channel TrenchMOS transistor 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, FPAK-3
|
Philips NXP Semiconductors N.V.
|
NDT456 NDT456P NDT456PJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
|
TPC8207 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
|
Toshiba Semiconductor
|
BUZ101 C67078-S1350-A2 BUZ101E3045 BUZ101STS |
N-Channel SIPMOS Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 SIPMOS ? Power Transistor From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] http://
|
BUZ104SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
|
2SK113Y 2SK113R 2SK113O |
TRANSISTOR,JFET,N-CHANNEL,50MA I(DSS),TO-18 TRANSISTOR,JFET,N-CHANNEL,5MA I(DSS),TO-18 TRANSISTOR,JFET,N-CHANNEL,25MA I(DSS),TO-18 From old datasheet system
|
Toshiba.
|
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