| PART |
Description |
Maker |
| BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 |
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Rectifier diodes fast/ soft-recovery
Rectifier diodes fast, soft-recovery
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| FQA8N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB4NB80 STB4NB80FP 5976 |
N - CHANNEL 800V - 3 Ohm - 4A - PowerMESH MOSFET
From old datasheet system
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道800V3Ω- 4A条，TO-220/TO-220FP PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A)
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
|
IRF[International Rectifier]
http://
|
| APT8075 APT8075BN APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| SPP06N80C3 SPA06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| KA5H0380 KA5X03XX03 KA5X03XX KA5H0365R KA5H0365RTU |
Fairchild Power Switch(FPS)
3A/650V 100KHz Power Switch
3A/800V 100KHz Power Switch
3A/800V 50KHz Power Switch
3A/800V 70KHz Power Switch
3A/650V 70KHz Power Switch
IC,SMPS CONTROLLER,CURRENT-MODE,BCDMOS,SIP,4PIN,PLASTIC
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQA7N80C |
800V N-Channel MOSFET 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET
800V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQB6N80 FQI6N80 FQB6N80TM |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQI3N80 FQB3N80 FQI3N80TU |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
