PART |
Description |
Maker |
HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM 4M x 4 Bit 4k 5 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM -4M x 4-Bit Dynamic RAM 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns 256k x 16 Bit FPM DRAM 5 V 50 ns 256k x 16-Bit Dynamic RAM
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SIEMENS[Siemens Semiconductor Group] Infineon
|
AS4C4M4 |
16M FPM DRAM
|
Austin Semiconductor
|
IC41SV44052 IC41SV44054 IC41SV44052-70J IC41SV4405 |
DYNAMIC RAM, FPM DRAM 4Mx4 bit Dynamic RAM with Fast Page Mode
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ICSI[Integrated Circuit Solution Inc] http://
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HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
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Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
MT4C16257 |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
|
Micron Technology, Inc.
|
HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered 1M x 64 Bit DRAM Module unbuffered From old datasheet system 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HY |
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M x 72 Bit ECC DRAM Module unbuffered 2M x 64 Bit DRAM Module unbuffered 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 60 ns, DMA168
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Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50 INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50 4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
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http:// SIEMENS A G SIEMENS AG
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