| PART |
Description |
Maker |
| BYV45-600 |
Normal recovery diode. All purpose mean power rectifier diodes, free wheeling diode, non controllable and half controllable rectifiers, UPS etc. Ifav = 45A, Vrrm = 600V.
|
USHA India LTD
|
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| IDB09E120 Q67040-S4384 Q67040-S4479 IDP09E120 |
Fast Switching EmCon Diode 快速开关快恢复二极
From old datasheet system
Silicon Power Diodes - 9A EmCon in TO220-2
Silicon Power Diodes - 9A EmCon in TO263
|
INFINEON[Infineon Technologies AG]
|
| 3EZ150 3EZ180 3EZ160 3EZ82 3EZ51 3EZ100 3EZ11 3EZ1 |
surface mount silicon Zener diodes
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)
|
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
http://
Pan Jit International I...
|
| RFP45N03L RF1S45N03LSM RF1S45N03L |
45A 30V 0.022 Ohm Logic Level N-Channel Power MOSFETs
45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| Q67040-S4485 IDB15E60 IDP15E60 Q67040-S4484 |
From old datasheet system
Fast Switching EmCon Diode
Silicon Power Diodes - 15A EmCon in TO263
Silicon Power Diodes - 15A EmCon in TO220-2
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| RFP45N06LE RF1S45N06LESM FN4076 |
From old datasheet system
45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
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