| PART |
Description |
Maker |
| RFLA1022SR RFLA1022PCK-410 RFLA1022TR7 |
Low Noise, High Linearity Amplifier 400MHz to 1500MHz
|
RF Micro Devices
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| ICL7621 ICL7621DCBA ICL7621DCBA-T ICL7621DCPA ICL7 |
(ICL7621 / ICL7641 / ICL7642) Dual/Quad / Low Power CMOS Operational Amplifiers
High-Performance Impact-X<TM> PAL<R> Circuits 20-CFP -55 to 125
Dual/Quad, Low Power CMOS Operational Amplifiers
Dual/Quad Low Power CMOS Operational Amplifiers
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| ELCM-5_1 ELCM-5 ELCM-5TR |
E-Series Surface Mount Mixer 5-1500MHz
|
MACOM[Tyco Electronics]
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| MC145109 MC145107 MC145112P MC145112 MC145109P MC1 |
CMOS LSI (LOW-POWER COMPLEMENTARY MOS) PLL FREQUENCY SYNTHESIZERS
CMOS MSI / Low Power Complementary MOS
|
MOTOROLA[Motorola, Inc]
|
| MAX2022 MAX2022ETX MAX2022ETXD MAX2022ETXTD MAX202 |
High-Dynamic-Range, Direct Upconversion 1500MHz to 2500MHz Quadrature Modulator
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| MAX2022ETX12 MAX202212 |
High-Dynamic-Range, Direct Up/ Downconversion 1500MHz to 3000MHz Quadrature Modulator/Demodulator
|
Maxim Integrated Products
|
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
