PART |
Description |
Maker |
PAK-VI |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
OSD070TN84 |
310 Genius Drive
|
ETC List of Unclassifed Manufacturers
|
SR5408 |
310.00 MHz One Port SAW Resonator
|
Vanlong Technology Co., Ltd.
|
2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
LR38574 |
Timing Generator IC for 1 090 k/1 310 k-pixel CCDs
|
Sharp Corporation Sharp Electrionic Components
|
NX8346TS |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
NEC
|
2N7002E11 2N7002ET1G 2N7002ET3G |
Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 Small Signal MOSFET 60 V, 310 mA, TRENCH, N-Channel 260 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Small Signal MOSFET
|
ON Semiconductor
|
NX5321 NX5321EK-AZ NX5321EH-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NEC
|
R463I333050N0K |
Capacitor, film, 0.33 uF, /-10% Tol, -40/ 110C, Safety: X2, 310 VAC, Lead Spacing=15 mm
|
Kemet Corporation
|