PART |
Description |
Maker |
OP750A OP750B OP750C OP750D |
NPN Pho totransistor with Base- Emitter Resistor
|
Optek Technology
|
2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
NESG2031M05-T1 NESG2031M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范 From old datasheet system
|
NEC, Corp. NEC Corp. NEC[NEC]
|
MCRF355 MCRF360 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
|
Microchip
|
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
CPH6519 |
NPN NPN NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier, Driver Applications
|
Sanyo Semicon Device
|
2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
FTM3725 |
NPN General Purpose Amplifier NPN Transistor 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
BC550C BC549B BC549B-D BC549C BC550B |
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
Low Noise Transistors NPN Silicon(硅NPN低噪声晶体管) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Low Noise Transistor NPN Silicon(30V硅NPN低噪声晶体管) 低噪声晶体管NPN硅(30V的硅npn型低噪声晶体管)
|
ON Semiconductor http://
|
2SC5346 2SC5346S |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-71VAR 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
Panasonic, Corp. Matsshita / Panasonic Panasonic Semiconductor
|
2SD773 2SD773U4 2SD773-L2-AZ |
2000 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-221VAR NPN SILICON TRANSISTOR From old datasheet system
|
NEC Corp. NEC[NEC]
|