| PART |
Description |
Maker |
| NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs]
http://
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| NX6508 |
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
California Eastern Laboratories
|
| NX6506GH-AZ NX6506GK-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
California Eastern Laboratories
|
| NX8562LB31 NX8562 NX8562-AZ NX8562LB279-BA NX8562L |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)
|
CEL[California Eastern Labs]
|
| NX6506GK-AZ NX6506 NX6506GH-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX6509GH-AZ NX6509GK-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
|
California Eastern Laboratories
|
| NX8510UD61 NX8510UD51 NX8510UD53 NX8510UD55 NX8510 |
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1610 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1510 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1530 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1550 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1570 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1590 nm.
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NEC
|
| NX5312 NX5312EH-AZ NX5312EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
|
California Eastern Labs
|
| NX5307EK-AZ NX5307 NX5307EH-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
|
CEL[California Eastern Labs]
|
| NX6307 NX63067H CALIFORNIAEASTERNLABORATORIES-NX63 |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
California Eastern Laboratories
|
| NX7329BB-AA-AZ NX7329BB-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN)
|
CEL[California Eastern Labs]
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