| PART |
Description |
Maker |
| NTE56039 |
TRIAC, 4A Sensitive Gate
|
NTE[NTE Electronics]
|
| WTD4A60S |
Sensitive Gate Triac
|
WINSEMI SEMICONDUCTOR
|
| BT137F-500E |
500 V, triac sensitive gate
|
Philips
|
| HTN4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-126 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| HTM4A60S |
INSULATED TYPE SENSITIVE GATE TRIAC (TO-126ML PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| Z0103MNT1G Z0109MNT1G |
Sensitive Gate Triac Series Silicon Bidirectional Thyristors
|
ON Semiconductor
|
| BT139X-500E BT139X-600E BT139X-800E |
Triacs sensitive gate(双向可控硅敏感门) 800 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BT136-800E BT136-800E127 |
4Q Triac 4Q双向可控
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005
|
NXP Semiconductors N.V.
|
| MAC97A6 |
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits
|
TY Semiconductor Co., Ltd
|
| BT138 BT138-600D BT138-600E BT138-800E BT138-600E1 |
4Q Triac 4Q双向可控
12 A four-quadrant triacs, sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: SOT78 (TO-220AB); Container: Tube pack
12 A four-quadrant triacs, sensitive gate; Package: SOT78 (TO-220AB); Container: Tube pack
|
NXP Semiconductors N.V.
|
| BT136-600E127 |
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
|
NXP Semiconductors N.V.
|
| S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V.
10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
ETC[ETC]
|
