| PART |
Description |
Maker |
| NTE555A |
Silicon Pin Diode VHF Band Switch
|
NTE[NTE Electronics]
|
| JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| MV209ZL1 MV209RL MV209RL1 |
VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 CASE 182-06, TO-226AC, 2 PIN
|
ON Semiconductor
|
| BB669 |
ER 4C 4#16S PIN PLUG RTANG
Varactordiodes - Silicon tuning diode for VHF 2-band hyperband TV tuners
|
Infineon Technologies AG
|
| BA128210 BA1283-TR3 |
Band Switching Diodes
DIODE SILICON, VHF BAND, MIXER DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
Silicon Epicap Diodes
|
ONSEMI[ON Semiconductor]
|
| 1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| KDS114E KDS114E04 |
SILICON EPITAXIAL PLANAR DIODE
SILICON, VHF BAND, MIXER DIODE
|
KEC(Korea Electronics)
|
| KDV273 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
| MA4X348 |
Silicon planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
|
