| PART |
Description |
Maker |
| AF109R Q60106-X109-R1 |
PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62701-F92 AF289 |
PNP GERMANIUM UHF TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SA52 |
GERMANIUM PNP ALLOY JUNCTION TRANSISTOR
|
Unknow
ETC
List of Unclassifed Manufacturers
|
| NTE104 |
Germanium PNP Transistor Audio Frequency Power Amplifier
|
NTE[NTE Electronics]
|
| 2SB493 |
From old datasheet system
GERMANIUM PNP ALLOY JUNCTION TRANSISTOR
|
Panasonic Semiconductor
|
| 2SA839 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
Unknow
|
| AF239S Q62701-F51 SIEMENSAG-Q62701-F51 |
LJT 41C 41#16 SKT WALL RECP
PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
| NTE213 |
Germanium PNP Transistor High Power, High Gain Amplifier
|
NTE[NTE Electronics]
|
| 2SC2484 2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A
SILICON EPITAXAL BASE VLESA TRANSISTOR
|
Panasonic Semiconductor
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
