| PART |
Description |
Maker |
| NR8501FR-CB-AZ NR8501 NR8501CP-BC-AZ NR8501CP-CC-A |
NECs 50 μm InGaAs APD IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NR4510UR-AZ |
NECs 050 um InGaAs APD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/S APPLICATIONS
|
California Eastern Laboratories
|
| NR8300FP-CC |
NECs 30 Um InGaAs APD IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATION AND OTDR APPLICATIONS 邻舍30嗯铟镓砷APD的同轴与光纤通信和光时域反射应用工具
|
California Eastern Laboratories, Inc.
NEC
CEL[California Eastern Labs]
|
| APD-1150 APD-1155 |
InGaAs Avalanche PHOTODIODE InGaAs APD with Mini-Size TO Package
|
Optoway Technology Inc
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| C30659-900-1060-1550NM |
Silicon and InGaAs APD Preamplifier Modules
|
Perkin Elmer Optoelectronics
|
| C30659-900-R8A C30659 C30659-1060-3A C30659-1060-R |
Silicon and InGaAs APD Preamplifier Modules
|
PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
| FU-318SAP- FU-318SAP-M6 FU-318AP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND 铟镓砷APD的模块长波段
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NR347OMU-CC-AZ NR3470MU-CC |
NECs InGaAs PIN PD MODULE WITH INTERNAL PREAMPLIFIER FOR 10 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| PD-1310 PD-1310-XFA PD-1320-VF PD-1300-HFA PD-1300 |
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL
|
Optoway Technology Inc
|
