| PART |
Description |
Maker |
| 0022282038 22-28-2038 |
2.54mm (.100) Pitch KK? Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, with Backwalls Removed
2.54mm (.100) Pitch KK庐 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38渭m (15渭) Gold (Au) Selective Plating, with Backwalls Remove
2.54mm (.100) Pitch KK垄莽 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38楼矛m (15楼矛) Gold (Au) Selective Plating, with Backwalls Rem
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Molex Electronics Ltd.
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| 0022282048 22-28-2048 |
2.54mm (.100) Pitch KK? Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 4 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, with Backwalls Removed
2.54mm (.100) Pitch KK庐 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 4 Circuits, 0.38渭m (15渭) Gold (Au) Selective Plating, with Backwalls Remove
2.54mm (.100) Pitch KK垄莽 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 4 Circuits, 0.38楼矛m (15楼矛) Gold (Au) Selective Plating, with Backwalls Rem
|
Molex Electronics Ltd.
|
| 0022282049 22-28-2049 |
2.54mm (.100) Pitch KK? Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 4 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating, with Backwalls Removed
2.54mm (.100) Pitch KK庐 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 4 Circuits, 0.76渭m (30渭) Gold (Au) Selective Plating, with Backwalls Remove
2.54mm (.100) Pitch KK垄莽 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 4 Circuits, 0.76楼矛m (30楼矛) Gold (Au) Selective Plating, with Backwalls Rem
|
Molex Electronics Ltd.
|
| K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H5 |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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