| PART |
Description |
Maker |
| MX29F200CTTI-90G 29F200C-55 29F200C-70 29F200C-90 |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F200BMC-70 MX29F200TTC-70 MX29F200TTI-90 MX29F |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| BS616LV2025 |
Asynchronous 2M(256Kx8 or 128Kx16 Switchable) bits Static RAM
From old datasheet system
|
BSI
|
| MX27L2000T2I-25 MX27L2000T2I-20 MX27L2000T3I-15 MX |
XO 33.3333MHZ 50PPM 3.3V SMD-7050 TR-7-PL
CAP 10UF 25V 10% TANT RAD.10 TR-14
LT Series Water Resistant Linear Position Transducer, 50,8 mm [2.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000202
null2M-BIT [256Kx8] CMOS EPROM 256K X 8 OTPROM, 120 ns, PDSO32
OSCILLATOR 24.576MHZ SMD 256K X 8 OTPROM, 150 ns, PDSO32
null2M-BIT [256Kx8] CMOS EPROM 256K X 8 OTPROM, 200 ns, PDSO32
|
Macronix International Co., Ltd.
|
| MX27L2000MI-15 MX27L2000MC-25 MX27L2000MC-12 MX27L |
null2M-BIT [256Kx8] CMOS EPROM
|
MCNIX[Macronix International]
|
| KM68S2000 |
256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM68U2000A |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM) 256Kx8位低功耗和低电压的CMOS静态RAM56K × 8位低功耗和低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| LE25U20AMB-AH |
2M-bit (256Kx8)Serial Flash Memory
|
ON Semiconductor
|
| BS616UV2019 BS616UV2019TIP85 BS616UV2019AC BS616UV |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit 超低功率/电压CMOS SRAM28K的16
020419-0023 超低功率/电压CMOS SRAM28K的16
Hex Buffer/Driver With Open-Drain Outputs 14-SOIC -40 to 85
JT 55C 55#20 SKT PLUG
Asynchronous 2M(128Kx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| 5962-8766505YA 5962-8766503YA 5962-8766507UA 5962- |
Complete High-Speed CMOS, 12-Bit ADC
CMOS, 8-Bit-Compatible, 12-Bit DAC
CMOS 12-Bit Buffered Multiplying DACs
16-Bit Microprocessor 16位微处理
|
Electronic Theatre Controls, Inc.
|
| IS24C02 IS24C08 IS24C04 IS24C01 24C16 IS24C16-3PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
From old datasheet system
301K 1% 100PPM TF
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
RES 2.7 OHM 5% 0.1 W METAL FILM SMT 0805 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
RESISTOR,309,CR0805 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2线串行EEPROM中的CMOS
|
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
Integrated Silicon Solution...
|
