| PART |
Description |
Maker |
| MX28F128J3 MX28F640J3 |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
Macronix International
|
| MX28F320J3 |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
Macronix International
|
| UPD421175G5-35-7JF UPD421175G5-25-7JF UPD421175LE- |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
| IBM0118165J3-70 IBM0118165PT3-6R IBM0118165BT3-6R |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
International Business Machines, Corp.
|
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
| K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
| MX23L12811 MX23L12811MC-10 MX23L12811MC-12 MX23L12 |
128M-BIT (8M x 16) MASK ROM WITH PAGE MODE(SOP ONLY)
|
Macronix International Co., Ltd.
|
| MX23L12811 MX23L12811MC-12 23L12811-10 23L12811-12 |
128M-BIT (8M x 16) MASK ROM WITH PAGE MODE(SOP ONLY)
|
MXIC
MCNIX[Macronix International]
|
| MBM29XL12DF-70 MBM29XL12DF-80 |
PAGE MODE FLASH MEMORY CMOS 128M BIT 页面模式闪存的CMOS 128M的钻
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
