| PART |
Description |
Maker |
| 4X16E43V 4X16E83V 4X16E83VTW-6 MEM4X16E43VTW-5 |
4 MEG x 16 EDO DRAM
|
ETC[ETC]
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write
CONNECTOR ACCESSORY
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MT4C1004J MT4C1004J883C |
4 MEG x 1 DRAM FAST PAGE MODE
|
AUSTIN[Austin Semiconductor]
|
| AS4SD32M16DGC-75_ET AS4SD32M16DGC-75_IT AS4SD32M16 |
512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| MT4C4005 |
1 MEG x 4 DRAM FAST PAGE MODE WRITE-PER-BIT
|
MICRON[Micron Technology]
|
| AS4LC1M168 AS4LC1M16883C AS4LC1M16 |
1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH
|
ASI
ETC[ETC]
AUSTIN[Austin Semiconductor]
|
| MT48H4M16LFB4-75ITH MT48H4M16LFB4-8ITH |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
Mobile SDRAM MT48H4M16LF ?1 Meg x 16 x 4 banks
|
Micron Technology
|
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
