PART |
Description |
Maker |
MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇,二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
MT8D132X MT8D132M-XXX MT16D132 MT16D232 MT16D232-1 |
1 MEG, 2 MEG x 32 DRAM MODULES
|
MICRON[Micron Technology]
|
MT4LDT464AG MT4LDT264AG MT4LDT164AG |
4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模 1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块 2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
|
Micron Technology, Inc.
|
MT4LC4M4E8DJ |
4 MEG x 4 EDO DRAM
|
Micron Technology
|
MT4C4M4E8T MT4C4M4E9T MT4C4M4E8TG MT4LC4M4E9TGS MT |
4 MEG x 4 EDO DRAM
|
MICRON[Micron Technology]
|
AS4SD8M16 AS4SD8M16DG-75_ET AS4SD8M16DG-75_IT AS4S |
128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
97SD3232RPME 97SD3232RPMI 97SD3232RPMH 97SD3232RPM |
1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, QFP132
|
Maxwell Technologies, Inc
|
AS4LC1M168 AS4LC1M16883C AS4LC1M16 |
1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH
|
ASI ETC[ETC] AUSTIN[Austin Semiconductor]
|
MT48H4M16LFB4-75ITH MT48H4M16LFB4-8ITH |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 Mobile SDRAM MT48H4M16LF ?1 Meg x 16 x 4 banks
|
Micron Technology
|
LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|