Part Number Hot Search : 
LA7855 BTP953L3 2CL70A 1N2827 CHIPS IDT74FCT 8206BA4 MT88E46A
Product Description
Full Text Search

MRF6S21100HSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S21100HSR3_1283629.PDF Datasheet

 
Part No. MRF6S21100HSR3 MRF6S21100HR3
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 666.08K  /  15 Page  

Maker

FREESCALE[Freescale Semiconductor, Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF6S21100H
Maker: MOTOROLA
Pack: 高频管
Stock: Reserved
Unit price for :
    50: $110.77
  100: $105.23
1000: $99.69

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MRF6S21100HSR3 MRF6S21100HR3 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF6S21100HSR3 MRF6S21100HR3 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF6S21100HSR3 ]

[ Price & Availability of MRF6S21100HSR3 by FindChips.com ]

 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs


 Related Part Number
PART Description Maker
RFK35N10 RFK35N08 POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
NDP6020P NDB6020P P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
MRF8S19140HR3 MRF8S19140HSR3 RF Power Field Effect Transistors
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3 RF Power Field Effect Transistors
Freescale (Motorola)
Freescale Semiconductor, Inc
MRF141 RF FIELD-EFFECT POWER TRANSISTOR
Advanced Semiconductor
MRF19085 MRF19085LR3 MRF19085LSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
UFT150-28 RF POWER FIELD-EFFECT TRANSISTOR
Advanced Semiconductor, Inc.
MTP12N10L Power Field Effect Transistor
New Jersey Semi-Conductor P...
 
 Related keyword From Full Text Search System
MRF6S21100HSR3 description MRF6S21100HSR3 Megabit MRF6S21100HSR3 filetype:pdf MRF6S21100HSR3 for sale MRF6S21100HSR3 Operation
MRF6S21100HSR3 参数比较 MRF6S21100HSR3 supply MRF6S21100HSR3 clock MRF6S21100HSR3 Device MRF6S21100HSR3 技术资料下载
 

 

Price & Availability of MRF6S21100HSR3

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.21431303024292