| PART |
Description |
Maker |
| AC105 |
1 MHz - 150 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
TELEDYNE COUGAR INC
|
| M57785L |
135 MHz - 150 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
|
| PN5338 SPN5338 |
5 MHz - 150 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER SM-11, 4 PIN
|
NXP Semiconductors N.V.
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| EH3725ETTS-150.000M |
OSCILLATORS 25PPM -40 85 2.5V 4 150.000MHZ TS CMOS 5.0X3.2 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 150 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| UPB553AC |
150 MHz DIVIDE-BY-16/17 LOW POWER PRESCALERS
|
NEC[NEC]
|
| E13C5F2F-150.000M |
OSCILLATORS 20PPM 0 70 3.3V 4 150.000MHZ TS LVPECL 3.2X5MM 6PAD SMD CRYSTAL OSCILLATOR, CLOCK, 150 MHz, LVPECL OUTPUT
|
Ecliptek, Corp.
|
| MJE15030 MJE15031 MJE15029 MJE15028 ON2012 |
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS 8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
SEMICONDUCTOR TECHNICAL DATA
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| PTFA041501E PTFA041501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
|
Infineon Technologies AG
|
| PTFB211501E PTFB211501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFA091503EL |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz
|
Infineon Technologies AG
|
| MCP6L71RT-E_MS MCP6L71RT-E_OT MCP6L71RT-E_SL MCP6L |
2 MHz, 150 μA Op Amps
2 MHz, 150 渭A Op Amps
2 MHz, 150 楼矛A Op Amps
|
Microchip Technology
|
