| PART |
Description |
Maker |
| GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU- |
These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material technology. 这些芯片型LED的利用铝铟镓磷化物（磷化铝铟镓）材料技术
|
International Light Technologies, Inc.
International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| TQ7625 |
1850-1910 MHz, PSC TDMA Power Amp IC-HBT
3V HBT TDMA Power Amplifier IC
|
TRIQUINT[TriQuint Semiconductor]
|
| SGA-8343 |
Low Noise/ High Gain SiGe HBT
Low Noise, High Gain SiGe HBT 低噪声，高增益SiGe HBT
|
Ironwood Electronics
ETC[ETC]
List of Unclassifed Manufacturers
|
| HMC361 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 11.0 GHz
From old datasheet system
Prescaler
600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs HBT MMIC DIVIDE-BY-2/ DC - 11.0 GHz
|
Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
|
| 3SK0273 |
Gallium Arsenide Devices
|
Panasonic
|
