PART |
Description |
Maker |
MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V4450A |
4.4-5.0 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFK25V4045 |
14.0-14.5 GHz BAND 0.3W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC42V4450A |
4.4-5.0 GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET 5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET From old datasheet system L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|