| PART |
Description |
Maker |
| MGFC38V6472 |
RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges
V(rrm): 400V; 25A rectifier bridge
V(rrm): 1200V; 35A rectifier bridge
V(rrm): 100V; 25A rectifier bridge
V(rrm): 1000V; 25A rectifier bridge
V(rrm): 1000V; 10A rectifier bridge
V(rrm): 100V; 10A rectifier bridge
V(rrm): 400V; 10A rectifier bridge
V(rrm): 1200V; 10A rectifier bridge
V(rrm): 50V; 10A rectifier bridge
V(rrm): 200V; 10A rectifier bridge
V(rrm): 600V; 10A rectifier bridge
V(rrm): 800V; 10A rectifier bridge
V(rrm): 1200V; 25A rectifier bridge
V(rrm): 1000V; 35A rectifier bridge
V(rrm): 50V; 25A rectifier bridge
V(rrm): 600V; 25A rectifier bridge
|
IRF[International Rectifier]
|
| 1KAB20E 1KAB100E 1KAB80E 1KAB-E 1KAB10E 1KAB40E 1K |
200V Bridge in a D-38 package
50V Bridge in a D-38 package
1000V Bridge in a D-38 package
100V Bridge in a D-38 package
400V Bridge in a D-38 package
600V Bridge in a D-38 package
800V Bridge in a D-38 package
1.2 amp rectifier bridge
|
http://
IRF[International Rectifier]
|
| MP1010 MP1000 MP1001 MP1002 MP1004 MP1006 MP1008 |
10A BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| FFPF10U40S FFPF10U40STU |
240 x 64 pixel format, LED, or EL Backlight available 10 A, 400 V, SILICON, RECTIFIER DIODE
10A/400V Ultra Fast Recovery Rectifiers
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| KBPC1008S KBPC1010S KBPC1000S KBPC1001S KBPC1002S |
10A IN-LINE BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| KBPC10P KBPC1000P KBPC1000PW KBPC1001P KBPC1001PW |
10A SINGLE-PHASE BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| KBPC10_06 KBPC1000 KBPC1000W KBPC1001 KBPC1001W KB |
10A SINGLE-PHASE BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| MP1008 MP1000 MP1006 |
(MP1000 - MP1010) 10A BRIDGE RECTIFIER
|
Won-Top Electronics
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| STB10NA40 STB10NA40-1 STB10NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-262VAR
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
