| PART |
Description |
Maker |
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLK057WG |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
| HWL23NPB |
L-Band GaAS Power FET
|
Hexawave, Inc
|
| HWL30NPA |
L-Band GaAs Power FET
|
Aimtron Technology
|
| HWL34YRF |
L-Band GaAs Power FET
|
Hexawave, Inc
|
