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M57161L-01 - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HYBRID IC FOR DRIVING TRENCH-GATE IGBT

M57161L-01_1270021.PDF Datasheet
 
Part No. M57161L-01
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
File Size 112.05K  /  6 Page  

Maker
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: M57161L-01
Maker: Powerex Inc
Pack: ETC
Stock: Reserved
Unit price for :
    50: $0.00
  100: $0.00
1000: $0.00

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