| PART |
Description |
Maker |
| HYM71V16655BT6 |
PC100 SDRAM Unbuffered DIMM
|
Hynix Semiconductor
|
| V436416S04V |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| M366S1724CT0-C1L M366S1724CT0-C1H |
PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块，缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
| M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H |
PC100 Unbuffered DIMM
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYS72V16201GR-8 HYS72V32200GR-8 HYS72V32201GR-8 HY |
PC100 Registered SDRAM-Module(PC100 用于寄存SDRAM 模块) 注册PC100的内存模块（PC100的用于寄存的内存模块
x72 SDRAM Module x72内存模块
|
SIEMENS AG
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| PC100 KMM366S1623CT-G8 KMM366S1623CT-GH KMM366S162 |
PC100 SDRAM MODULE Preliminary 初步PC100的内存模
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HD74CDC2509B |
9-bit PLL Clock-Driver for PC100
|
Hitachi Semiconductor
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
