PART |
Description |
Maker |
M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H |
PC100 Unbuffered DIMM 32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYM71V16655BT6 |
PC100 SDRAM Unbuffered DIMM
|
Hynix Semiconductor
|
M366S0823D M366S0823DTS |
PC100 Unbuffered DIMM(168pin) SPD Specification(64Mb D-die base)
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
HYMD216726A6J-J HYMD216726AL6J-J |
Unbuffered DDR SO-DIMM 16Mx72|2.5V|J|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor http://
|
UG42S6442HSG-PL UG42S6442HSG-PH |
16M Bytes (2M x 64 bits) PC100 SDRAM Unbuffered SODIMM
|
Electronic Theatre Controls, Inc.
|
HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD5 |
DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
V436416S04V |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
HYMD132725B8J-J HYMD132725BL8J-J |
32Mx72|2.5V|J|x18|DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|