PART |
Description |
Maker |
M28W320BB M28W320BB100N1T M28W320BB100N6T M28W320B |
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29W320E M29W320EB70N1 M29W320ET70N1 M29W320ET90ZE |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29W160ET M29W160EB70N6 M29W160EB90N6E M29W160EB70 |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
M29DW323DT70N6 M29DW323DT70N6E M29DW323DT70ZA6E M2 |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 8:24, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M29DW323DT70N6E M29DW323DT70N1 M29DW323DT70N1E M29 |
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory 32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
|
意法半导 STMicroelectronics
|
M29F160BB M29F160BT 6678 |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)Single Supply Flash Memory From old datasheet system
|
STMicro
|
AB28F400BX-T90 A28F400BX-B AB28F400BX-B90 |
4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16/ 512K x8 BOOT BLOCK FLASH MEMORY FAMILY JT 23C 2#16 21#20 SKT RECP JT 32C 32#20 PIN RECP 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8)启动块闪存系列 4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel Corporation Intel Corp. Intel, Corp.
|
M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双24分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V. 意法半导 ST Microelectronics SGS Thomson Microelectronics
|
M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体兆位128KB的x16的SRAM,多个存储产 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体2兆位128KB的x16的SRAM,多个存储产 PV76L14-18P
|
http:// STMicroelectronics N.V. 意法半导
|