| PART |
Description |
Maker |
| KVR133X64C3L256 KVR133X64C3L_256 KVR133X64C3L/256 |
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6米x位的PC133 CL3超薄168针DIMM
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6x位的PC133 CL3超薄168针DIMM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| KVR133X64C3Q256 KVR133X64C3Q_256 KVR133X64C3Q/256 |
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| KVR133X64C3L128 KVR133X64C3L_128 KVR133X64C3L/128 |
128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
128MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3Q128 KVR133X64C3Q_128 KVR133X64C3Q/128 |
128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
128MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3128 KVR133X64C3_128 KVR133X64C3/128 |
128MB 16M x 64Bit PC133 CL3 Low Profile 168-Pin Dimm Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3L64 KVR133X64C3L_64 KVR133X64C3L/64 |
64MB 8M x 64-BIT PC133 CL3 168-PIN DIMM Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| KVR133X64C3/1G |
1024MB 128M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1B5616BAM K1B5616BBM |
256Mb (16M x 16 bit) UtRAM
|
Samsung Electronics
|
| KVR133X64C2512 KVR133X64C2_512 KVR133X64C2/512 |
512MB 64M x 64-Bit PC133 CL2 Low Profile 168-Pin Dimm Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V830 |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块)
3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块)
3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存（3.38米64 -位1列同步动态内存模块）
|
SIEMENS AG
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
