| PART |
Description |
Maker |
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TH50VSF2583AASB TH50VSF2582 TH50VSF2582AASB |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA[Toshiba Semiconductor]
|
| TH50VSF2580AASB TH50VSF2581AASB |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA[Toshiba Semiconductor]
|
| TH50VSF3680 TH50VSF3681AASB TH50VSF368 |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA[Toshiba Semiconductor]
|
| DS42516 AM29DL324D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| AM49DL640AG85IT |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| AM45DL6408G |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
