| PART |
Description |
Maker |
| K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280432A K4S280432A-TC_L10 K4S280432A-TC_L1H K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| KM44S32030B KM44S32030BT-G_F10 KM44S32030BT-G_F8 |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4 |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64Mbit SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4 |
RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58
RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TIP-N-RING |
Multilayer Ceramic Chip Capacitors, Ideal for Telephone Line (Tip `N Ring) Filtering, Replaces High Voltage, Leaded, Film Capacitors, Rated for Telecommunications Voltages, Low ESR, Wide Ban
|
Vishay
|
| SC73P1601 |
4BIT MCU
|
Silan Microelectronics
|
| W28F641B W28F641BB80L W28F641BT80L W28F641TB80L W2 |
From old datasheet system
64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond
|
