PART |
Description |
Maker |
K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY5R256HCXXX HY5R256HC745 |
RDRAM
|
Hynix Semiconductor
|
MB814953 |
4.5 MBit RDRAM
|
Fujitsu Microelectronics
|
MSM5718B70 |
18-Megabit RDRAM (2M x 9)
|
OKI electronic componets
|
MSM5718B70 |
18-Megabit RDRAM (2M x 9) 18兆位的RDRAM米9
|
OKI SEMICONDUCTOR CO., LTD.
|
AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement) 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices SPANSION[SPANSION]
|
KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung semiconductor
|
KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
SIDC02D60SIC2SAWN SIDC02D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 6A die sawn Diodes - HV Chips - 600V, 6A die unsawn
|
Infineon
|
MURC520 |
MURC520 Ultrafast Silicon Die MURC520 Ultrafast Silicon Die
|
Sensitron
|