PART |
Description |
Maker |
K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG[Samsung semiconductor]
|
KM48S16030B KM48S16030BT-G_F10 KM48S16030BT-G_F8 K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM4米8位4银行同步DRAM LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. Electronic Theatre Controls, Inc.
|
K4N26323AE-GC25 K4N26323AE-GC20 K4N26323AE-GC22 K4 |
128Mbit GDDR2 SDRAM 128Mbit GDDR2 SDRAM 4M X 32 DDR DRAM, PBGA144
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
1212691 |
Replacement die - CF 500/DIE RCI 6-1
|
PHOENIX CONTACT
|
HYB25D128160CT-6 HYB25D128160CT-5 HYB25D128160CE-5 |
128Mbit Double Data Rate (DDR) Components
|
Infineon
|
KM48S16030AT-G_F8 KM48S16030AT-G_FH KM48S16030AT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144 4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
M59PW1282-100M1 M59PW1282-100M1T M59PW1282-120M1T |
128Mbit (two 64Mb, x16, Uniform Block, LightFlash)3V Supply, Multiple Memory Product 128Mbit (two 64Mb, x16, Uniform Block, LightFlash) 3V Supply, Multiple Memory Product
|
ST Microelectronics
|
V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|