PART |
Description |
Maker |
48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72 256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic Samsung semiconductor
|
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W332M72V-133SBI W332M72V-XBX |
32Mx72 Synchronous DRAM 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA208
|
White Electronic Design... WHITE ELECTRONIC DESIGNS CORP
|
K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费(符合RoHS CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM44S32030BT-G_FA KM44S32030BT-G_FH KM44S32030BT-G |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
GM72V28441ALT-7J |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
EM63B165TS-5ISG EM63B165TS-6ISG EM63B165TS-7ISG |
32M x 16 bit Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
HYM71V633201TH-75 |
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|
KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|