| PART |
Description |
Maker |
| M312L5128MT0 M312L5128MT0-CA0 M312L5128MT0-CA2 M31 |
DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| K4S1G0632D K4S1G0732D |
SDRAM stacked 1Gb D-die
|
Samsung Electronics
|
| K4T1G084QD K4T1G164QD |
1Gb D-die DDR2 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T1G164QQ K4T1G164QQ-HCLE6 K4T1G164QQ-HCLE7 K4T1G |
1Gb Q-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4B1G0446D |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4B1G0446C-CF8 K4B1G0446C K4B1G0446C-ZCG9 K4B1G044 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
http://
|
| K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
| K4T1G084QQ K4T1G084QQ-HCLE6 K4T1G084QQ-HCLE7 K4T1G |
1Gb Q-die DDR2 SDRAM Specification 1Gb的调Q DDR2内存芯片规格
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4T1G164QD K4T1G084QD |
(K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
