| PART |
Description |
Maker |
| IXTN61N50 IXTT75N10 IXTH67N10 IXTH75N10 IXTM67N10 |
MegaMOS FET 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
High Current Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MTB33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| PSMN4R4-80PS |
N-channel 80 V, 4.1 m惟 standard level FET
N-channel 80 V, 4.1 m standard level FET 100 A, 80 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 80 V, 4.1 mΩ standard level FET
|
NXP Semiconductors N.V.
|
| RJK0602DPN-E0 RJK0602DPN-E0-T2 RJK0602DPN-E0-15 |
N-Channel MOS FET 60 V, 100 A, 3.9 m.
N-Channel MOS FET 60 V, 100 A, 3.9 m?
|
Renesas Electronics Corporation
|
| MTB60N10E7T4 MTB60N10E7 |
TMOS POWER FET 60 AMPERES 100 VOLTS
|
ON Semi
|
| SD2107DD |
-100 V, 5 ohm, P-channel enhancement-mode D-MOS power FET
|
Topaz Semiconductor
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| RJK1001DPN-E0 RJK1001DPN-E0-15 |
N-Channel MOS FET 100 V, 80 A, 5.5 m
N-Channel MOS FET 100 V, 80 A, 5.5 m?
|
Renesas Electronics Corporation
|
| RJK1001DPP-E0 RJK1001DPP-E0-T2 RJK1001DPP-E0-15 |
N-Channel MOS FET 100 V, 80 A, 5.5 m
N-Channel MOS FET 100 V, 80 A, 5.5 m?
|
Renesas Electronics Corporation
|
| MTP40N10E ON2608 ON2607 |
TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM
From old datasheet system
|
Motorola, Inc
|
| MTP10N10EL ON2537 |
From old datasheet system
TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
|
MOTOROLA[Motorola, Inc]
|
| MTP27N10E MTP27N10E_D ON2571 |
From old datasheet system
TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
