| PART |
Description |
Maker |
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 5962F0152101QXC 5962F0152101VXC ISL74422ARHQF ISL7 |
Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened 9A. Non-Inverting Power MOSFET Drivers 辐射加固9A条。非反向功率MOSFET驱动
Power MOSFET Drivers, Rad-Hard, 9A, Non-Inverting
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier
Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大
CONNECTOR ACCESSORY
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation
Intersil, Corp.
http://
|
| HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374K |
From old datasheet system
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Radiation Hardened Octal Transparent Latch/ Three-State
|
INTERSIL[Intersil Corporation]
|
| HS-2510RH 5962D9568601VPA HS9-2510RH-Q HS7-2510RH- |
Radiation Hardened High Slew Rate Operational Amplifier
Radiation Hardened High Slew Rate Operational Amplifier OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CDIP8
CAP TANT LOESR 330UF 10V 20% SMD
Radiation Hardened High Slew Rate
Operational Amplifier(抗辐射高输出电压转换速率、低偏置电流运算放大
|
Intersil, Corp.
Intersil Corporation
|
| FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ905 |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| XQR4000XL XQR4013XL-3CB228M XQR4036XL-3CB228M XQR4 |
QPRO XQR4000XL Radiation Hardened FPGAs
QPRO radiation hardened FPGA.
|
Xilinx
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
