| PART |
Description |
Maker |
| STB5NB60 |
N-Channel 600V-1.8Ω-5A- I2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道600V.8Ω- 5A I2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
意法半导
STMicroelectronics N.V.
|
| STI6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STI360N4F6 STP360N4F6 |
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
High avalanche ruggedness
|
ST Microelectronics
STMicroelectronics
|
| MINI-MELF |
Package Dimensions
|
Galaxy Semi-Conductor H...
|
| PM2IV1 |
Package Dimensions in mm
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SOT-343 |
Package Dimensions
|
Vishay Siliconix
|
| FQI13N50CTU |
500V N-Channel Advance Q-FET C-Series; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 13 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| X2-DFN0806-3 X3-DFN0603-2 X1-DFN1212-3 X1-DFN1006- |
PACKAGE OUTLINE DIMENSIONS
|
Diodes Incorporated
|
| 081029131240 |
PACKAGE OUTLINE DIMENSIONS
|
Galaxy Semi-Conductor H...
|
| DFN1006-2 |
PACKAGE OUTLINE DIMENSIONS
|
Galaxy Semi-Conductor H...
|
| STB4NB50 6246 |
N-CHANNEL 500V - 2.5 OHM - 3.8A - D2PAK/I2PAK POWERMESH MOSFET
N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET
N - CHANNEL 500V - 2.5 - 3.8A - D2PAK/I2PAK PowerMESH TM MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
