| PART |
Description |
Maker |
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| BRG25N120D |
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
|
Foshan Blue Rocket Elec...
|
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| OM6502ST OM6501ST |
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE
|
List of Unclassifed Manufacturers
ETC
|
| IRGBC20F |
600V Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRGPC30UD2 |
600V Copack IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
SemeLAB
|
| 2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
SEME-LAB[Seme LAB]
|
| IRGVH50F |
INSULATED GATE BIPOLAR TRANSISTOR
1200V DISCRETE Hi-Rel IGBT in a TO-258AA package
|
International Rectifier
|
| BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz
|
Infineon Technologies AG
|
| IRG4PC60U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| APT43GA90SD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43;
|
MICROSEMI POWER PRODUCTS GROUP
|
