| PART |
Description |
Maker |
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| TND027MP |
TRANSISTOR, NPN, TO-3PB; Transistor type:Power General Purpose; Voltage, Vceo:140V; Current, Ic continuous a max:12A; Voltage, Vce sat max:2.5V; hfe, min:60; ft, typ:15MHz; Case style:TO-3PB; Current, Ib:1.5A; Current, Ic av:12A; RoHS Compliant: Yes
Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| BCP69-16 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., Ltd
|
| FS400R07A1E3 |
DC-collector current / diode forward current limited by power terminals
|
Infineon Technologies AG
|
| HC55120 HC55121 HC55130 HC55140 HC55142 |
SLIC, Low Power, 30mA Loop Current, Longitudinal Balance 53dB
SLIC, Low Power, 30mA Loop Current, Polarity Reversal, Longitudinal Balance 53dB
SLIC, Low Power, 45mA Loop Current, Longitudinal Balance 63dB
SLIC, Low Power, 45mA Loop Current, Polarity Reversal, Gnd Start, Gnd Key, Line Volt Measurement, with Long Balance 63dB and Pulse Metering
SLIC, Low Power, Operation of the UniSLIC 14 and IDT821064 Evaluation Module
|
Intersil
|
| FS30UM-3 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Bench Power Supply; Output Voltage:35V; Output Current:6A; Number of Outputs:1; Calibrated:No; Display Technology:Digital; Output Current Max:6A; Output Current Min:0A; Output Voltage Max:35V; Output Voltage Min:0V
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| BD538 BD536 BD534 BD534J BD538K BD538KTU BD536J |
; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA
RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 12V; Power: 2W; Custom Solutions Available; 1kVDC
Medium Power Linear and Switching Applications
PNP Epitaxial Silicon Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
