| PART |
Description |
Maker |
| FQI55N06 FQB55N06 FQB55N06TM |
60V N-Channel QFET
60V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQT13N06L FQT13N06LTF FQT13N06LL99Z |
60V LOGIC N-Channel MOSFET
60V N-Channel Logic level QFET
60V LOGIC N-Channel MOSFET 2800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| FQB7P06 FQI7P06 FQI7P06TU FQB7P06TM |
60V P-Channel MOSFET
60V P-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI50N06TU |
60V N-Channel QFET; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| FQD11P06TF |
60V P-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 9.4 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
| HUFA76432S3S HUFA76432P3 HUFA76432S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 55A条（丁）|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDD45AN06LA0 |
60V N-Channel PowerTrench MOSFET
60V N-Channel PowerTrench ?MOSFE
N-CHANNEL POWERTRENCH MOSFET 60V, 22A, 45M
|
Fairchild Semiconductor
|
| NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管（漏电2.5A, 漏源电压-60V，导通电.3Ω
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
