PART |
Description |
Maker |
IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
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International Rectifier
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IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
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IRF[International Rectifier]
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IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements 100V, Combination 2N-2P-CHANNEL -100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
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International Rectifier
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FDP047N10 |
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM 100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
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IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*) POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
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IRF[International Rectifier]
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FQB34P10TM FQB34P10TM-F085 |
100V P-Channel MOSFET -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
|
Fairchild Semiconductor
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IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
|
Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
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FDM3622_07 FDM3622 FDM362207 |
N-Channel PowerTrench? MOSFET 100V, 4.4A, 60mΩ N-Channel PowerTrench㈢ MOSFET 100V, 4.4A, 60mヘ
|
FAIRCHILD[Fairchild Semiconductor]
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FQI34P10 FQB34P10 FQB34P10TM |
From old datasheet system 100V P-Channel MOSFET 100V P-Channel QFET
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http:// FAIRCHILD[Fairchild Semiconductor]
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IRF520VL IRF520VS |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
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IRF[International Rectifier]
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