| PART |
Description |
Maker |
| MA2S304 |
Silicon epitaxial planar type VHF BAND, 27.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| MA27V12 |
Silicon epitaxial planar type For VCO UHF BAND, 3.75 pF, 8 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| FMMV2109 FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2 |
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES
|
ETC
ZETEX[Zetex Semiconductors]
|
| 1SV161 |
Silicon Epitaxial Planar Type Variable Capacitance Diode
|
Toshiba Semiconductor
|
| 1SV24507 1SV245 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| 1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS
|
TOSHIBA
|
| 3410GH142M400HPA1 3410DH102M350HPA1 3410EG212M250H |
Round Snap-In Aluminum Electrolytic Capaci-
|
Cornell Dubilier Electr...
|
| T499 T499_1 |
High Temperature ( 175) Tantalum SMT Capaci
|
KEMET[Kemet Corporation]
|
|
