PART |
Description |
Maker |
MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V4450A C424450A |
From old datasheet system 4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
FLM5359-18F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
FLM7785-4F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
FLM3135-12F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
FLM3135-18F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
FLM6472-6F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|