| PART |
Description |
Maker |
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLU10ZM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLU17ZM |
From old datasheet system
L-Band Medium & High Power GaAs FET
|
Fujitsu Microelectronics
Fujitsu Component Limited.
|
| TQP3M9006-PCB |
High Linearity LNA Gain Block
500 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TRIQUINT SEMICONDUCTOR INC
|
| MGFC5218 C5218A |
18000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
K-Band 2-Stage Power Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC5217 C5217A |
18000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
K-Band 2-Stage Power Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RF7206 |
1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT PACKAGE-10
3 V W-CDMA BAND 2 LINEAR PA MODULE
|
RF Micro Devices
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| RF3223 |
HIGH LINEARITY/DRIVER AMPLIFIER 500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
|
| ADA10000RS3P1 ADA10000RS24Q1 |
50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER ROHS COMPLIANT, S3, SOIC-16
50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER ROHS COMPLIANT, S24, TO-243AA, SOT-89, 3 PIN
|
ANADIGICS, Inc.
|
