| PART |
Description |
Maker |
| MAX197 MAX197ACAI MAX197ACNI MAX197ACWI MAX197AEAI |
Multi-Range (±10V, ±5V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface
Multi-Range (10V, 5V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface
Multi-Range (【10V, 【5V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface
Multi-Range (±10V, ±5V, 10V, 5V),
Single 5V, 12-Bit DAS with 8 4 Bus Interface
DATA ACQ SYSTEM,8-CHANNEL,12-BIT,SSOP,28PIN,PLASTIC
From old datasheet system
Multi-Range (10V / 5V / 10V / 5V) / Single 5V / 12-Bit DAS with 8 4 Bus Interface
Multi-Range (0V, V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface
Multi-Range (0V, 5V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products Inc
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| KA8507 KA8507D |
10V; 1000mW; compandor
10V; 410mW; compandor
|
Samsung Electronic
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| ADREF01H ADREF01 ADREF01A ADREF01AQ ADREF01E ADREF |
10V 5V References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, CDIP8
10V 5V References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, CDIP8
10V 5V References 10VV的参
|
Analog Devices, Inc.
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| GRM319R61A106K |
Chip Monolithic Ceramic Capacitor 1206 X5R 10μF 10V
Chip Monolithic Ceramic Capacitor 1206 X5R 10レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM188R61A335K |
Chip Monolithic Ceramic Capacitor 0603 X5R 3.3μF 10V
Chip Monolithic Ceramic Capacitor 0603 X5R 3.3レF 10V
|
http://
Murata Manufacturing Co., Ltd.
|
| GRM32ER71A226K |
Chip Monolithic Ceramic Capacitor 1210 X7R 22μF 10V
Chip Monolithic Ceramic Capacitor 1210 X7R 22レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM21BR61A106K |
Chip Monolithic Ceramic Capacitor 0805 X5R 10μF 10V
Chip Monolithic Ceramic Capacitor 0805 X5R 10レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GCM188C71A105K |
Chip Monolithic Ceramic Capacitor 0603 X7S 1μF 10V
Chip Monolithic Ceramic Capacitor 0603 X7S 1レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM219R61A475K |
Chip Monolithic Ceramic Capacitor 0805 X5R 4.7μF 10V
Chip Monolithic Ceramic Capacitor 0805 X5R 4.7レF 10V
|
Murata Manufacturing Co., Ltd.
|
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