| PART |
Description |
Maker |
| EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E |
512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
|
Elpida Memory, Inc.
DRAM
|
| EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存
512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| EBE41RE4AAHA-5C-E EBE41RE4AAHA EBE41RE4AAHA-4A-E |
4GB Registered DDR2 SDRAM DIMM (512M words x 72 bits, 2 Ranks)
|
ELPIDA[Elpida Memory]
|
| EDS2732CABH-1A-E EDS2732CABH-1AL-E EDS2732CABH-75L |
256M bits SDRAM (8M words x 32 bits)
GT 25C 25#12 SKT PLUG 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
71-580540-35S
71-580584-05P
|
http://
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write
CONNECTOR ACCESSORY
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
| EDS2532CABH-1A-E EDS2532CABH-75-E EDS2532CABH-1AL- |
GT 25C 25#12 PIN PLUG 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
256M bits SDRAM (8M words x 32 bits)
GT 5C 3#4 2#16 PIN PLUG
GT 3C 3#0 SKT PLUG
|
http://
Elpida Memory, Inc.
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
