| PART |
Description |
Maker |
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| STK22C48 STK22C48N25 STK22C48N35 STK22C48N35I STK2 |
2K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
2K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
2K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
2K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM
128K x 16 HIGH-SPEED CMOS STATIC RAM
From old datasheet system
128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM）的
128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT7MB4045S15M IDT7MB4045S15Z IDT7MB4045S20M IDT7M |
256K x 32 CMOS STATIC RAM MODULE
|
Integrated Device Technology
|
| CAT5114SI-00TE13 CAT5114U-10TE13 CAT5114U-00TE13 C |
DIGITAL POTENTIOMETER|CMOS|SOP|8PIN|PLASTIC
128K x 8 Static RAM
512K x 24 Static RAM 数字电位器|的CMOS | TSSOP封装| 8引脚|塑料
|
Analog Devices, Inc.
|
| KM23V8000D |
8M-Bit (1Mx8) CMOS Mask ROM(8M(1Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDI8F32512C EDI8F32512C20MMC-G EDI8F32512C25MMC-G |
512Kx32 Static RAM CMOS, High Speed Module
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| EDI8F32128C20MZC EDI8F32128C25MMC EDI8F32128C25MZC |
128KX32 STATIC RAM CMOS, HIGH SPEED MODULE
|
WEDC[White Electronic Designs Corporation]
|
