PART |
Description |
Maker |
EA61FC2-F |
FRD - Low Power Loss
|
NIEC[Nihon Inter Electronics Corporation]
|
EC8FS6 |
FRD - Low Power Loss, High Efficiency
|
NIEC[Nihon Inter Electronics Corporation]
|
HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
|
Mini-Circuits
|
EP05Q04 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight LOW POWER LOSS/ HIGH EFFICIENCY LOW POWER LOSS HIGH EFFICIENCY LOW POWER LOSS, HIGH EFFICIENCY
|
ETC[ETC] Nihon Inter Electronics Corporation
|
APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
APT10035B2LL APT10035LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 28A 0.350 Ohm LED Lamp; Color:Red/Red; Leaded Process Compatible:Yes Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
http:// Advanced Power Technology Ltd.
|
APT10021JFLL |
POWER MOS 7 1000V 37A 0.210 Ohm Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7 is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
PQ05TZ11 PQ05TZ51 PQ12TZ11 PQ12TZ51 PQ09TZ51 PQ09T |
Low Power-Loss Voltage Regulators with OFF-state Low Dissipation Current
|
Sharp Electrionic Components
|
PQ12RA11 PQ09RA1 PQ09RA11 PQ05RA1 PQ12RA1 PQ05RA11 |
OFF-STATE LOW DISSIPATION CURRENT 1A OUTPUT, LOW POWER-LOSS VOLTAGE REGULATORS
|
SHARP[Sharp Electrionic Components]
|
APT30M30JLL |
POWER MOS 7 300V 88A 0.030 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT30M36B2LL APT30M36LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 300V 84A 0.036 Ohm
|
Advanced Power Technology Ltd.
|