PART |
Description |
Maker |
MCH5812 |
Nch SBD MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
CPH5824 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的:N沟道MOSFET的硅SBD智能交通:肖特基二极管通用开关器件应 Nch SBD
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
IDT72T54242 IDT72T54242L5BB IDT72T54242L6-7BB IDT7 |
32K x 10 x 4 / 32K x 10 x 2 Quad/Dual TeraSync DDR/SDR FIFO, 2.5V 64K x 10 x 4 / 64K x 10 x 2 Quad/Dual TeraSync DDR/SDR FIFO, 2.5V 128K x 10 x 4 / 128K x 10 x 2 Quad/Dual TeraSync DDR/SDR FIFO, 2.5V
|
IDT
|
HY5S6B6DL/SFP-SE |
Mobile SDR - 64Mb
|
Hynix Semiconductor
|
HY5W6B6DLF HY5W6B6DLFP-HE HY5W6B6DLFP-PE |
Mobile SDR - 64Mb
|
Hynix Semiconductor
|
MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
HYM71V16635HCT8 |
16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
HYM71V16635HCLT8R-H HYM71V16635HCLT8R-K HYM71V1663 |
16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
HY57V283220T-I HY57V283220LT-PI |
4Mx32|3.3V|4K|55/6/7/8/P/S|SDR SDRAM - 128M 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
HYNIX SEMICONDUCTOR INC
|
H55S1262EFP-60E H55S1262EFP-60M H55S1262EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|